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Dual RF LDMOS Bias Controller with
Nonvolatile Memory
ABSOLUTE MAXIMUM RATINGS
AV DD to AGND .........................................................-0.3V to +6V
DV DD to DGND.........................................................-0.3V to +6V
AGND to DGND.....................................................-0.3V to +0.3V
CS_+, CS_- to AGND .............................................-0.3V to +34V
CS_+ to CS_-
If CS_+ > 6V .........................................................-0.3V to +6V
If CS_+ ≤ 6V .......................................................-0.3V to V CS_-
Analog Inputs/Outputs to AGND ..................................................
...........................-0.3V to the lower of (AV DD + 0.3V) and +6V
SDA/DIN and SCL/SCLK to DGND ..........................-0.3V to +6V
Continuous Input Current (all terminals)...........................±50mA
Continuous Power Dissipation (T A = +70°C)
48-Pin, 7mm x 7mm, TQFN (derate 27.8mW/°C above
+70°C).....................................................................2222.2mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Digital Inputs/Outputs to DGND
(except SDA/DIN and SCL/SCLK)............................................
............................-0.3V to the lower of (DV DD + 0.3V) and +6V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V CS_+ = +32V, AV DD = DV DD = +5V ±5%, external V REFADC = +2.5V, external V REFDAC = +2.5V, C REF = 0.1μF, C GATE_ = 0.1nF,
V SENSE = V CS_+ - V CS_- , T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
HIGH-SIDE CURRENT-SENSE PGA
Common-Mode Input Voltage
Range
Common-Mode Rejection Ratio
V CS1+ ,
V CS2+
CMRR
5V < V CS_+ < 32V
5
110
32
V
dB
CS_+ Input Bias Current
CS_- Input Bias Current
I CS _+
I CS _-
V SENSE < 100mV over the common-mode
range
V SENSE < 100mV over the common-mode
range
135
195
±1
μA
μA
Gain = 25
0
100
Full-Scale Sense Voltage Range
V SENSE
Gain = 10
0
250
mV
Gain = 2
Gain = 25
0
75
1250
100
Minimum Sense Voltage Range
for ±0.75% V SENSE Accuracy
Minimum Sense Voltage Range
for ±2.5% V SENSE Accuracy
Total PGAOUT Voltage Error
PGAOUT Capacitive Load
C PGAOUT
Gain = 10
Gain = 2
Gain = 25
Gain = 10
Gain = 2
V SENSE = 75mV
75
75
20
20
20
±0.1
250
1250
100
250
1250
±0.75
50
mV
mV
%
pF
PGAOUT Settling Time
Saturation Recovery Time
t HSCS
(Note 1)
Settles to within ±0.5% accuracy from
V SENSE = 3 x full scale
< 25
< 45
μs
μs
2
_______________________________________________________________________________________
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